镁掺杂氧化锌纳米颗粒作为无机电子传输层在量子点发光二极管中的作用

S. Rani, J. Kumar
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引用次数: 3

摘要

全无机或混合量子点发光二极管(qled)采用氧化锌纳米粒子作为电子传输层(ETL),从而提高了器件的性能。ZnO的掺杂策略依赖于能级的微调,从而改善电荷平衡并提供更好的器件特性。本文采用了一种这样的策略,即利用镁掺杂ZnO作为ETL来设计qled,以促进电荷平衡并抑制多余的电子注入。该方法提供了一种将可变带隙多元半导体集成为ETL的新方法。
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Effect of Mg-doped zinc oxide nanoparticles as inorganic electron transport layer in quantum dot light-emitting diodes
The all-inorganic or hybrid quantum dot light-emitting diodes (QLEDs) employed zinc oxide (ZnO) nanoparticles as electron transport layer (ETL) which led to enhanced performance of the device. The doping strategy of ZnO relies on the fine tuning of the energy levels which improves the charge balance and provides better device characteristics. One such strategy has been incorporated in this work as Magnesium-doped ZnO has been utilized as ETL in designing the QLEDs which facilitates charge balance and suppresses the excess electron injection. This approach provides a new method of incorporating multielement semiconductors with variable bandgaps as ETL.
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