利用近场扫描光学显微镜对漏模多晶硅光电探测器进行光学表征

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference Pub Date : 2006-05-21 DOI:10.1109/CLEO.2006.4627961

G. Yuan, P. Nikkel, C. Thangaraj, T.W. Chen, R. Pownall, A. Iguchi, K. Lear

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摘要

采用近场扫描光学显微镜对用于CMOS片上光互连的漏模耦合多晶硅光电探测器的光吸收性能进行了表征。观测结果与模态计算结果吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Optical characterization of a leaky-mode polysilicon photodetector using near-field scaning optical microscopy

Near-field scanning optical microscopy was used to characterize the light absorption capability of a leaky-mode coupled polysilicon photodetector fabricated for CMOS on-chip optical interconnects. The observed results are in good agreement with modal calculations.

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2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference

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