CMOS中噪声的紧凑建模

IEEE Custom Integrated Circuits Conference 2006 Pub Date : 2006-09-01 DOI:10.1109/CICC.2006.320898

A. Scholten, R. V. Langevelde, L. Tiemeijer, D. Klaassen

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引用次数: 21

摘要

给出了PSP MOSFET模型热噪声方程的物理背景。结果表明，PSP热噪声模型通过了一系列MOSFET热噪声基准测试。在没有任何拟合参数的情况下，它可以很准确地预测三种现代CMOS技术的实验数据集。讨论了器件布局对噪声特性的影响，并进行了实验验证

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Compact modeling of noise in CMOS

The physical background of the thermal noise equations of the PSP MOSFET model is presented. The PSP thermal noise model is shown to pass a number of proposed benchmark tests for MOSFET thermal noise. Without any fitting parameters, it is shown to predict with great accuracy a collection of experimental data on three modern CMOS technologies. The impact of device layout on noise properties is discussed and demonstrated experimentally

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IEEE Custom Integrated Circuits Conference 2006

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