基于ta2o5的可控自适应RRAM的阻性开关稳定

Proceedings of Technical Program of 2012 VLSI Technology, System and Application Pub Date : 2012-04-23 DOI:10.1109/VLSI-TSA.2012.6210099

W. Chen, T. Y. Wu, S. Y. Yang, W. H. Liu, H. Y. Lee, Y. S. Chen, C. Tsai, P. Gu, K. Tsai, H. Wei, P. S. Chen, Y. H. Wang, F. Chen, M. Tsai

{"title":"基于ta2o5的可控自适应RRAM的阻性开关稳定","authors":"W. Chen, T. Y. Wu, S. Y. Yang, W. H. Liu, H. Y. Lee, Y. S. Chen, C. Tsai, P. Gu, K. Tsai, H. Wei, P. S. Chen, Y. H. Wang, F. Chen, M. Tsai","doi":"10.1109/VLSI-TSA.2012.6210099","DOIUrl":null,"url":null,"abstract":"Ta/Ta2O5 RRAMs show self-compliant characteristics in some Ta or Ta2O5 thickness range but Ti/TaOx RRAMs always need current compliance due to totally consumption of SC conduction layer.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"118 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Stabilization of resistive switching with controllable self-compliant Ta2O5-based RRAM\",\"authors\":\"W. Chen, T. Y. Wu, S. Y. Yang, W. H. Liu, H. Y. Lee, Y. S. Chen, C. Tsai, P. Gu, K. Tsai, H. Wei, P. S. Chen, Y. H. Wang, F. Chen, M. Tsai\",\"doi\":\"10.1109/VLSI-TSA.2012.6210099\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ta/Ta2O5 RRAMs show self-compliant characteristics in some Ta or Ta2O5 thickness range but Ti/TaOx RRAMs always need current compliance due to totally consumption of SC conduction layer.\",\"PeriodicalId\":388574,\"journal\":{\"name\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"volume\":\"118 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2012.6210099\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210099","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

Ta/Ta2O5 rram在某些Ta或Ta2O5厚度范围内表现出自适应特性，而Ti/TaOx rram由于完全消耗SC导电层而始终需要电流顺应性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Stabilization of resistive switching with controllable self-compliant Ta2O5-based RRAM

Ta/Ta₂O₅ RRAMs show self-compliant characteristics in some Ta or Ta₂O₅ thickness range but Ti/TaO_x RRAMs always need current compliance due to totally consumption of SC conduction layer.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of Technical Program of 2012 VLSI Technology, System and Application

自引率

0.00%

发文量