{"title":"一种超低电压UWB CMOS低噪声放大器","authors":"Y. Yu, Y.‐J.E. Chen, D. Heo","doi":"10.1109/APMC.2006.4429429","DOIUrl":null,"url":null,"abstract":"This paper presents an ultra-low voltage UWB LNA in a commercial 0.18mum CMOS technology. The technique of inductive degeneration is used in a two-stage conventional distributed amplifier to achieve broadband and low noise. The common source single-stage amplifier is cascaded to the conventional distributed amplifier to improve the gain at high frequency. The measured gain of the integrated LNA is 10dB with the 3dB bandwidth from 2.7 to 9.1 GHz. The average noise figure is 4.65dB and the IIP3 is OdBm. Operated at 0.6V, the UWB CMOS LNA consumes 7mW.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"An ultra-low voltage UWB CMOS low noise amplifier\",\"authors\":\"Y. Yu, Y.‐J.E. Chen, D. Heo\",\"doi\":\"10.1109/APMC.2006.4429429\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an ultra-low voltage UWB LNA in a commercial 0.18mum CMOS technology. The technique of inductive degeneration is used in a two-stage conventional distributed amplifier to achieve broadband and low noise. The common source single-stage amplifier is cascaded to the conventional distributed amplifier to improve the gain at high frequency. The measured gain of the integrated LNA is 10dB with the 3dB bandwidth from 2.7 to 9.1 GHz. The average noise figure is 4.65dB and the IIP3 is OdBm. Operated at 0.6V, the UWB CMOS LNA consumes 7mW.\",\"PeriodicalId\":137931,\"journal\":{\"name\":\"2006 Asia-Pacific Microwave Conference\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 Asia-Pacific Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APMC.2006.4429429\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 Asia-Pacific Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APMC.2006.4429429","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents an ultra-low voltage UWB LNA in a commercial 0.18mum CMOS technology. The technique of inductive degeneration is used in a two-stage conventional distributed amplifier to achieve broadband and low noise. The common source single-stage amplifier is cascaded to the conventional distributed amplifier to improve the gain at high frequency. The measured gain of the integrated LNA is 10dB with the 3dB bandwidth from 2.7 to 9.1 GHz. The average noise figure is 4.65dB and the IIP3 is OdBm. Operated at 0.6V, the UWB CMOS LNA consumes 7mW.
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