N. Trenado, J. Henness, L. Johansson, J. Hutchinson, L.A. Coldoren, J. Piprek
{"title":"集成光电器件的三维仿真","authors":"N. Trenado, J. Henness, L. Johansson, J. Hutchinson, L.A. Coldoren, J. Piprek","doi":"10.1109/NUSOD.2003.1259060","DOIUrl":null,"url":null,"abstract":"A three-dimensional (3D) simulation of the photonic components within an integrated optical-electrical-optical wavelength converter is presented. The converter design includes a 50 /spl mu/m long waveguide photodiode (WPD) which detects the incoming signal at any wavelength of the C band, e.g. at /spl lambda//sub in/ = 1530 nm. The optical signal is converted into an electrical signal that directly modulates a sampled-grating distributed Bragg-reflector (SGDBR) laser diode which is integrated with a semiconductor optical amplifier (SOA) for signal enhancement. The SGDBR laser can be tuned to emit at any wavelength of the C band, e.g., at /spl lambda//sub out/ = 1550 nm. The epitaxial structure of the different components is found to be similar. An offset multi-quantum-well (MQW) active region is grown on top of the waveguide region. A ridge waveguide structure is etched through the MQW region. Passive device sections are formed by etching off the MQWs completely.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"3D simulation of integrated optoelectronic devices\",\"authors\":\"N. Trenado, J. Henness, L. Johansson, J. Hutchinson, L.A. Coldoren, J. Piprek\",\"doi\":\"10.1109/NUSOD.2003.1259060\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A three-dimensional (3D) simulation of the photonic components within an integrated optical-electrical-optical wavelength converter is presented. The converter design includes a 50 /spl mu/m long waveguide photodiode (WPD) which detects the incoming signal at any wavelength of the C band, e.g. at /spl lambda//sub in/ = 1530 nm. The optical signal is converted into an electrical signal that directly modulates a sampled-grating distributed Bragg-reflector (SGDBR) laser diode which is integrated with a semiconductor optical amplifier (SOA) for signal enhancement. The SGDBR laser can be tuned to emit at any wavelength of the C band, e.g., at /spl lambda//sub out/ = 1550 nm. The epitaxial structure of the different components is found to be similar. An offset multi-quantum-well (MQW) active region is grown on top of the waveguide region. A ridge waveguide structure is etched through the MQW region. Passive device sections are formed by etching off the MQWs completely.\",\"PeriodicalId\":206987,\"journal\":{\"name\":\"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2003.1259060\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2003.1259060","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
3D simulation of integrated optoelectronic devices
A three-dimensional (3D) simulation of the photonic components within an integrated optical-electrical-optical wavelength converter is presented. The converter design includes a 50 /spl mu/m long waveguide photodiode (WPD) which detects the incoming signal at any wavelength of the C band, e.g. at /spl lambda//sub in/ = 1530 nm. The optical signal is converted into an electrical signal that directly modulates a sampled-grating distributed Bragg-reflector (SGDBR) laser diode which is integrated with a semiconductor optical amplifier (SOA) for signal enhancement. The SGDBR laser can be tuned to emit at any wavelength of the C band, e.g., at /spl lambda//sub out/ = 1550 nm. The epitaxial structure of the different components is found to be similar. An offset multi-quantum-well (MQW) active region is grown on top of the waveguide region. A ridge waveguide structure is etched through the MQW region. Passive device sections are formed by etching off the MQWs completely.
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