{"title":"用于中红外(2-5µm)应用的SH-LED通用模型","authors":"Sanjeev, P. Chakrabarti","doi":"10.1109/ICETET.2008.8","DOIUrl":null,"url":null,"abstract":"In this paper, we present a physics based model of a P+ -InAs0.36Sb0.20P0.44/ n0 -InAs/n -InAs single heterostructure light emitting diode (SH-LED) suitable for use as source in gas detection and futuristic optical fiber communication systems in the mid-infrared spectral region at 300 K. The model takes into account all dominating radiative and non-radiative recombination processes, interfacial recombination and self-absorption in the active layer of the SH-LED structure. The effect of various recombination mechanisms on the quantum efficiency, modulation bandwidth and output power of the LED has been evaluated. The proposed SH- LED has been studied for its utility in mid-infrared optical fiber communication by considering the modulation bandwidth and its variation with active layer width of the SH-LED structure. The I-V characteristic of the SH-LED has been evaluated and cut-in voltage found to be 0.26 V. The output power of the SH-LED has been computed as a function of bias current and it is found to be in good agreement with the reported experimental results.","PeriodicalId":269929,"journal":{"name":"2008 First International Conference on Emerging Trends in Engineering and Technology","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Generic Model of SH-LED for Mid-infrared (2-5µm) Applications\",\"authors\":\"Sanjeev, P. Chakrabarti\",\"doi\":\"10.1109/ICETET.2008.8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present a physics based model of a P+ -InAs0.36Sb0.20P0.44/ n0 -InAs/n -InAs single heterostructure light emitting diode (SH-LED) suitable for use as source in gas detection and futuristic optical fiber communication systems in the mid-infrared spectral region at 300 K. The model takes into account all dominating radiative and non-radiative recombination processes, interfacial recombination and self-absorption in the active layer of the SH-LED structure. The effect of various recombination mechanisms on the quantum efficiency, modulation bandwidth and output power of the LED has been evaluated. The proposed SH- LED has been studied for its utility in mid-infrared optical fiber communication by considering the modulation bandwidth and its variation with active layer width of the SH-LED structure. The I-V characteristic of the SH-LED has been evaluated and cut-in voltage found to be 0.26 V. The output power of the SH-LED has been computed as a function of bias current and it is found to be in good agreement with the reported experimental results.\",\"PeriodicalId\":269929,\"journal\":{\"name\":\"2008 First International Conference on Emerging Trends in Engineering and Technology\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 First International Conference on Emerging Trends in Engineering and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICETET.2008.8\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 First International Conference on Emerging Trends in Engineering and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICETET.2008.8","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Generic Model of SH-LED for Mid-infrared (2-5µm) Applications
In this paper, we present a physics based model of a P+ -InAs0.36Sb0.20P0.44/ n0 -InAs/n -InAs single heterostructure light emitting diode (SH-LED) suitable for use as source in gas detection and futuristic optical fiber communication systems in the mid-infrared spectral region at 300 K. The model takes into account all dominating radiative and non-radiative recombination processes, interfacial recombination and self-absorption in the active layer of the SH-LED structure. The effect of various recombination mechanisms on the quantum efficiency, modulation bandwidth and output power of the LED has been evaluated. The proposed SH- LED has been studied for its utility in mid-infrared optical fiber communication by considering the modulation bandwidth and its variation with active layer width of the SH-LED structure. The I-V characteristic of the SH-LED has been evaluated and cut-in voltage found to be 0.26 V. The output power of the SH-LED has been computed as a function of bias current and it is found to be in good agreement with the reported experimental results.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
