从宏观和微观两个层面对特高压换流阀大厅层状介质中空间电位和电荷分布进行了全面的理论分析

Shi Shiling, Yongshen He, Haoyu Wang, Qian Zhou
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引用次数: 0

摘要

超高压换流阀厅内有许多电气设备,包括换流变压器、换流变压器衬套、壁衬套等典型电气设备。其中,换流阀厅内有多种绝缘介质,包括气体绝缘、液体绝缘和固体绝缘介质。对于分层介质,超高压变频器阀厅存在两个问题:1)阀厅的分层介质包括环氧浸渍纸、油浸渍纸等不同绝缘介质之间的界面。层状界面属于宏观范畴,可以用经典电磁理论进行充分描述。其瞬态过程可以用经典的集总参数微分方程模型来表征,其时间常数尺度在5000s左右。其空间尺度接近厘米尺度。2)阀霍尔变换器内部半导体器件的分层界面属于微观范畴,空间尺度分布在nm尺度,时间尺度分布在ns维附近。内部电荷和电势的分布可以用偏微分方程来描述,微分方程的参数是具有明确物理量的变量。本文首先从微观载流子层面对多栅MOS电容器的无杂质衬底进行了分析,给出了近表面任意点x处的少数载流子项和受体杂质浓度Na。通过对微粒子的沉降和沉降解析表达式的全面数学推导和分析,得到了层状绝缘介质内部,特别是层状绝缘介质界面处的空间电荷分布。进一步,对于受到高压和大电流联合作用的换流阀厅内电气设备,通过贝塞尔函数,从解析模型的角度推导了电热耦合的闭合解析解,得到了泄漏电流与电压的定量表征关系。本文从理论角度推导出特高压换流阀厅层状介质空间电位与电荷分布的充分理论分析关系,对特高压换流阀厅电气设备的运维具有良好的理论指导和实际应用价值。
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Full theoretical analysis of space potential and charge distribution in layered medium of UHV converter valve hall from macro and micro levels
There are many electrical equipment inside ultra-high voltage converter valve hall, including converter transformer, converter transformer bushing, wall bushing and other typical electrical equipment. Among them, there are many insulation media inside the converter valve hall, including gas insulation, liquid insulation and solid insulation media. For layered medium, there are two problems in the ultra-high voltage converter valve hall: 1) The layered medium in the valve hall includes the interface between different insulating mediums such as the epoxy impregnated paper and oil impregnated paper. The layered interface belongs to the macro category, which can be fully described by applying the classical electromagnetic theory. Its transient process can be characterized by the classical lumped parameter differential equation model, and its time constant scale is around 5000s. Its spatial scale is near cm scale. 2) The layered interface of semiconductor devices inside the valve hall converter belongs to the micro category, with spatial scale in the nm scale and the time scale distributed near the ns dimension. Internal charge and potential distribution can be described by partial differential equations, and the parameters of the differential equations are variables with clear physical quantities. In this paper, firstly, the substrate free of impurities of multi gate MOS capacitors is analyzed from the microscopic carrier level, and the minority carrier term and acceptor impurity concentration Na at any point x near the surface are given. Based on the full mathematical derivation and analysis of the micro particle's sink and sink analytic expressions, the space charge distribution inside the layered insulating medium is obtained, especially at the interface of layered medium. Furthermore, for the electrical equipment inside the converter valve hall, which is subject to the combined action of high voltage and large current, the closed analytical solution of the electro-thermal coupling is derived from the perspective of analytical model through Bessel function, and the quantitative characterization relationship between the leakage current and voltage is obtained. This paper derives full theoretical analytical relationship between the space potential and charge distribution of the layered medium in the UHV converter valve hall from theoretical point of view, which has the good theoretical guidance and the practical application value for operation and maintenance of electrical equipment in the UHV converter valve hall.
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