利用忆阻器状态变化行为识别光伏阵列故障

J. Mathew, M. Ottavi, Yunfan Yang, D. Pradhan
{"title":"利用忆阻器状态变化行为识别光伏阵列故障","authors":"J. Mathew, M. Ottavi, Yunfan Yang, D. Pradhan","doi":"10.1109/DFT.2014.6962094","DOIUrl":null,"url":null,"abstract":"Memristor is an emerging non-volatile memory device that features smaller size and hybrid memristor/CMOS integration, which maximizes the advantages of high density and versatility. In this paper we utilize the memristor as weights and its state change behavior to capture some of the potential faults in a system. Photovoltaic arrays are taken as an example for the study. We will demonstrate that the state variations can be mapped into a timing which can be used as useful information for behavior of the system under measurement. Empirical studies are carried out using Spice based simulations to investigate into the impact of biasing and threshold voltages on timing behavior. Underpinning these studies, a relationship between input voltage and memristor state transition is proposed and extensively validated through further simulations to identify specific faulty behavior.","PeriodicalId":414665,"journal":{"name":"2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Using memristor state change behavior to identify faults in photovoltaic arrays\",\"authors\":\"J. Mathew, M. Ottavi, Yunfan Yang, D. Pradhan\",\"doi\":\"10.1109/DFT.2014.6962094\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Memristor is an emerging non-volatile memory device that features smaller size and hybrid memristor/CMOS integration, which maximizes the advantages of high density and versatility. In this paper we utilize the memristor as weights and its state change behavior to capture some of the potential faults in a system. Photovoltaic arrays are taken as an example for the study. We will demonstrate that the state variations can be mapped into a timing which can be used as useful information for behavior of the system under measurement. Empirical studies are carried out using Spice based simulations to investigate into the impact of biasing and threshold voltages on timing behavior. Underpinning these studies, a relationship between input voltage and memristor state transition is proposed and extensively validated through further simulations to identify specific faulty behavior.\",\"PeriodicalId\":414665,\"journal\":{\"name\":\"2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DFT.2014.6962094\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DFT.2014.6962094","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

忆阻器是一种新兴的非易失性存储器件,具有更小的尺寸和混合忆阻器/CMOS集成,最大限度地发挥了高密度和多功能性的优势。在本文中,我们利用忆阻器作为权值及其状态变化行为来捕捉系统中的一些潜在故障。以光伏阵列为例进行研究。我们将证明状态变化可以被映射成一个时间,它可以被用作测量系统行为的有用信息。实证研究采用Spice为基础的模拟来调查偏置和阈值电压对时序行为的影响。在这些研究的基础上,提出了输入电压和忆阻器状态转换之间的关系,并通过进一步的仿真来识别特定的故障行为。
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Using memristor state change behavior to identify faults in photovoltaic arrays
Memristor is an emerging non-volatile memory device that features smaller size and hybrid memristor/CMOS integration, which maximizes the advantages of high density and versatility. In this paper we utilize the memristor as weights and its state change behavior to capture some of the potential faults in a system. Photovoltaic arrays are taken as an example for the study. We will demonstrate that the state variations can be mapped into a timing which can be used as useful information for behavior of the system under measurement. Empirical studies are carried out using Spice based simulations to investigate into the impact of biasing and threshold voltages on timing behavior. Underpinning these studies, a relationship between input voltage and memristor state transition is proposed and extensively validated through further simulations to identify specific faulty behavior.
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