采用铁电材料的可调谐阶跃阻抗谐振器带通滤波器

T. Yun, Hyun-Suk Kim, T. Hyun, Sung-su Kwoun
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引用次数: 4

摘要

本文讨论了采用BST薄膜作为可调谐器件的阶跃阻抗谐振器(SIR)带通滤波器。为了分析BST薄膜的相对介电常数,制作了指宽为10 μ m、间隙为5 μ m的BST数字间电容(IDC),其电容为0.951 pF, 6 GHz时BST薄膜的相对介电常数为1097。基于BST薄膜的可调谐SIR带通滤波器设计了22度耦合段和带头进料,并在MgO衬底上成功地演示了BST薄膜厚度为500 mn的可调谐SIR带通滤波器。可调谐SIR带通滤波器的中心频率在50 V偏置下从6.15 GHz移动到6.29 GHz,带宽约为3%。
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Tunable stepped impedance resonator bandpass filter using ferroelectric materials
In this paper, a stepped impedance resonator (SIR) bandpass filter using BST thin film as a tunable device has been discussed. For the analysis of relative dielectric constant of BST thin films, the BST interdigital capacitor (IDC) is fabricated with finger's width and gap of 10 mum and 5 mum, respectively, and the capacitance of IDC is 0.951 pF and the relative dielectric constant of BST thin film is 1,097 at 6 GHz. The tunable SIR bandpass filter using BST thin films is designed with coupling section of 22deg and tapped feeding and has been successfully demonstrated with the thickness of BST thin films of 500 mn on the MgO substrate. The center frequency of the tunable SIR bandpass filter is moved from 6.15 GHz to 6.29 GHz at 50 V bias with about 3% bandwidth.
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