Si integrated ferroelectric MEMS sensors using epitaxial PZT thin films on γ-Al2O3/Si substrates

Epitaxial stacked structure on Si substrates attracts much attention to sensors and actuator applications using functional material such as ferroelectrics, pyroelectrics and piezoelectrics since characteristics of those materials depend on crystallinity and crystal orientation. The epitaxial γ-Al2O3 films on Si substrates are suitable for above applications, which exhibit desirable features such as chemical and physical stability and good interface characteristics with Si. In this paper, recent our progress of ferroelectric MEMS sensors using epitaxial PZT thin films on the epitaxial γ-Al2O3/Si structure was reported.