低温制备钛酸铅薄膜的介电性能

Z. Nurbaya, M. Rusop
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引用次数: 1

摘要

钛酸铅(PbTiO3)是铁电陶瓷家族中的一种,其作为高电容无源器件(即电容器)的介电性能得到了广泛的研究。以晶硅为衬底,以Pt/Ti为中间层制备铁电陶瓷,需要较高的退火温度才能达到平均650℃的完美结晶度。这是晶粒尺寸均匀均匀且偶极矩趋于稳定的理想工艺。然而,高温确实会影响畴壁的成核位置,这是导致Pb挥发和薄膜降解的因素。进一步研究在相对较低的温度下制备PbTiO3薄膜,至少200°C可能是最理想的薄膜,以回答源的限制。因此,这些温度使得PbTiO3在熔融温度较低的玻璃基板上沉积成为可能。本研究采用溶胶-凝胶自旋镀膜的方法在铂镀膜玻璃基底上制备PbTiO3薄膜。通过5次沉积和每层约200°C 10min的干燥过程,获得了最佳薄膜厚度。在300 ~ 500℃的热炉中退火30min。然后用阻抗分析仪在约1000Hz的低频下测量所制备的薄膜的介电性能。发现介电常数与退火温度呈线性关系。然而,高介电常数导致了高介电损耗的因素,在交流信号中起着类似的作用。此外,还得到了PbTiO3薄膜在低频介电常数测量下的电容值。简而言之,介电常数和纳米尺度薄膜对高能量存储能力的影响很大,这将在以后的研究中讨论。
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Dielectric property of lead titanate thin films prepared on glass substrate at low temperature
Lead based titanate (PbTiO3) is one of ferroelectric ceramic family that has been widely investigated of its dielectric property towards high capacitance passive device, i.e. capacitor. It has been known that high annealing temperature is needed to perform perfect crystal level of ferroelectric ceramic that is averagely 650°C done by using crystalline Si substrate with Pt/Ti as intermediate layer. This had been confirmed as the ideal process to have perfectly distribution of uniform grain size with tendency of stable dipole moment. However, high temperature does affect the nucleation site of domain wall where here lays the factor contributes to Pb volatilization and yields to thin films degradation. Further investigation of PbTiO3 thin films preparation at relatively lower temperature was at least 200°C could be the most desirable thin films ever to answer the limitation of source. Therefore, these temperatures make deposition of PbTiO3 possible for glass substrate which has low melting temperature. The current study investigates preparation of PbTiO3 thin films on platinum coated glass substrate through sol-gel spin coating method. The optimum thickness of thin films was achieved by five times of depositions and punctuated with drying process about 200°C for 10mins for each layer. Annealing process was carried out in hot furnace at temperature 300°C to 500°C for 30mins. The prepared thin films were then being measured by impedance analyzer under low frequency about 1000Hz for the dielectric property investigation. It was found that the dielectric constant have linear relationship with annealing temperature. Nevertheless, high dielectric constant resulted to the factor of high dielectric loss that plays a role as in AC signal. In addition, the capacitance value of PbTiO3 thin films is being obtained under low frequency of dielectric constant measurement. Concisely, both dielectric constant and nanometer scaled thin films had influenced much to the capability for high energy storage which will be discussed later in future investigation.
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