G. Daligou, S. Assali, A. Attiaoui, É. Bouthillier, O. Moutanabbir
{"title":"GeSn中红外辐射载体寿命","authors":"G. Daligou, S. Assali, A. Attiaoui, É. Bouthillier, O. Moutanabbir","doi":"10.1109/SUM53465.2022.9858226","DOIUrl":null,"url":null,"abstract":"A theoretical framework based on the eight-band k.p formalism and the envelope function approximation (EFA) formalism is developed to investigate the luminescence properties of GeSn alloys. Using this framework, the steady-state radiative carrier lifetimes of Ge0.83 Sn0.17 samples are estimated in the ns order over the 4–80 K temperature range.","PeriodicalId":371464,"journal":{"name":"2022 IEEE Photonics Society Summer Topicals Meeting Series (SUM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Radiative Carrier Lifetime in GeSn Mid-Infrared Emitters\",\"authors\":\"G. Daligou, S. Assali, A. Attiaoui, É. Bouthillier, O. Moutanabbir\",\"doi\":\"10.1109/SUM53465.2022.9858226\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A theoretical framework based on the eight-band k.p formalism and the envelope function approximation (EFA) formalism is developed to investigate the luminescence properties of GeSn alloys. Using this framework, the steady-state radiative carrier lifetimes of Ge0.83 Sn0.17 samples are estimated in the ns order over the 4–80 K temperature range.\",\"PeriodicalId\":371464,\"journal\":{\"name\":\"2022 IEEE Photonics Society Summer Topicals Meeting Series (SUM)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Photonics Society Summer Topicals Meeting Series (SUM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SUM53465.2022.9858226\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Photonics Society Summer Topicals Meeting Series (SUM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SUM53465.2022.9858226","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Radiative Carrier Lifetime in GeSn Mid-Infrared Emitters
A theoretical framework based on the eight-band k.p formalism and the envelope function approximation (EFA) formalism is developed to investigate the luminescence properties of GeSn alloys. Using this framework, the steady-state radiative carrier lifetimes of Ge0.83 Sn0.17 samples are estimated in the ns order over the 4–80 K temperature range.