新型双通道体系MOSFET的仿真研究

2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI:10.1109/IWJT.2010.5474898

Yi-Hsuan Fan, Jyi-Tsong Lin, Y. Eng, Yu-Che Chang, Cheng-Hsin Chen, Kuan-Yu Lu, Chih-Hsuan Tai

{"title":"新型双通道体系MOSFET的仿真研究","authors":"Yi-Hsuan Fan, Jyi-Tsong Lin, Y. Eng, Yu-Che Chang, Cheng-Hsin Chen, Kuan-Yu Lu, Chih-Hsuan Tai","doi":"10.1109/IWJT.2010.5474898","DOIUrl":null,"url":null,"abstract":"In this work, a novel device called dual-channel body-tied (DCBT) MOSFET is proposed. According to numerical simulations, the DCBT MOSFET can reduce the lattice temperature about 51.6% in top and 53.8% in bottom channel, respectively, while maintain the desirable short-channel characteristics, compared with the conventional non-body-tied DC structure.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A simulation study of a novel dual-channel body-tied MOSFET\",\"authors\":\"Yi-Hsuan Fan, Jyi-Tsong Lin, Y. Eng, Yu-Che Chang, Cheng-Hsin Chen, Kuan-Yu Lu, Chih-Hsuan Tai\",\"doi\":\"10.1109/IWJT.2010.5474898\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, a novel device called dual-channel body-tied (DCBT) MOSFET is proposed. According to numerical simulations, the DCBT MOSFET can reduce the lattice temperature about 51.6% in top and 53.8% in bottom channel, respectively, while maintain the desirable short-channel characteristics, compared with the conventional non-body-tied DC structure.\",\"PeriodicalId\":205070,\"journal\":{\"name\":\"2010 International Workshop on Junction Technology Extended Abstracts\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Workshop on Junction Technology Extended Abstracts\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2010.5474898\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Workshop on Junction Technology Extended Abstracts","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2010.5474898","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在这项工作中，提出了一种称为双通道体系(DCBT) MOSFET的新型器件。数值模拟结果表明，与传统的非体系直流结构相比，DCBT MOSFET在保持理想的短沟道特性的同时，可将顶部和底部沟道的晶格温度分别降低51.6%和53.8%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

A simulation study of a novel dual-channel body-tied MOSFET

In this work, a novel device called dual-channel body-tied (DCBT) MOSFET is proposed. According to numerical simulations, the DCBT MOSFET can reduce the lattice temperature about 51.6% in top and 53.8% in bottom channel, respectively, while maintain the desirable short-channel characteristics, compared with the conventional non-body-tied DC structure.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 International Workshop on Junction Technology Extended Abstracts

自引率

0.00%

发文量

期刊最新文献

Enhanced thermal measurements of high power LEDs by junction characteristic Carbon nanotube thin film transistor devices Dual beam laser spike annealing technology Application of coherent resonant tunnelling theory in GaAs RTD fabrication Epitaxial NiSi2 source and drain technology for atomic-scale junction control in silicon nanowire MOSFETs