具有MoS2封盖层的高性能和可靠性Ge通道CMOS

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838533

J. Li, S. Xie, Z. Zheng, Y. Zhang, R. Zhang, M. Xu, Y. Zhao

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引用次数: 8

摘要

利用单个MoS2封盖层成功实现了具有量子结构良好通道的高性能Ge CMOS。由于两层厚的MoS2和Ge衬底之间存在较大的价带偏移(0.43 eV)和导带偏移(0.5 eV)， Ge p-和n- mosfet内的空穴和电子都被限制在Ge沟道中，栅极堆叠中陷阱引起的散射被有效抑制。结果，MoS2/Ge p-和n- mosfet表现出更好的空穴和电子迁移率，以及更好的器件可靠性行为。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High performance and reliability Ge channel CMOS with a MoS2 capping layer

High performance Ge CMOS with quantum well-structured channels has been successfully realized using a single MoS2 capping layer. Thanks to a large valence band offset (0.43 eV) and conduction band offset (0.5 eV) between the two-layers-thick MoS2 and the Ge substrate, both holes and electrons within the Ge p- and n-MOSFETs are confined into Ge channels and the scattering due to the traps in gate stacks is suppressed effectively. As a result, the MoS2/Ge p- and n-MOSFETs exhibit much improved hole and electron mobilities, as well as the improved device reliability behaviors.

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2016 IEEE International Electron Devices Meeting (IEDM)

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