{"title":"超越CMOS的新型硅器件","authors":"E. Suzuki, K. Ishii, T. Sekigawa","doi":"10.1109/WOLTE.2002.1022445","DOIUrl":null,"url":null,"abstract":"Silicon technologies have successively progressed in past half a century. To continue the development in the 21 at century, we need to consider and prepare new silicon devices in the range of deca-nano-meter. The suppression of the short-channel effect improving device performance is an important consideration in such an ultrasmall device. We review the development of the double-gate-type MOS device as an emerging device, and discuss the technology directions.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"New silicon devices beyond CMOS\",\"authors\":\"E. Suzuki, K. Ishii, T. Sekigawa\",\"doi\":\"10.1109/WOLTE.2002.1022445\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon technologies have successively progressed in past half a century. To continue the development in the 21 at century, we need to consider and prepare new silicon devices in the range of deca-nano-meter. The suppression of the short-channel effect improving device performance is an important consideration in such an ultrasmall device. We review the development of the double-gate-type MOS device as an emerging device, and discuss the technology directions.\",\"PeriodicalId\":338080,\"journal\":{\"name\":\"Proceedings of the 5th European Workshop on Low Temperature Electronics\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 5th European Workshop on Low Temperature Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WOLTE.2002.1022445\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 5th European Workshop on Low Temperature Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WOLTE.2002.1022445","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Silicon technologies have successively progressed in past half a century. To continue the development in the 21 at century, we need to consider and prepare new silicon devices in the range of deca-nano-meter. The suppression of the short-channel effect improving device performance is an important consideration in such an ultrasmall device. We review the development of the double-gate-type MOS device as an emerging device, and discuss the technology directions.
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