电容式并联MEMS开关的性能优化

2006 Asia-Pacific Microwave Conference Pub Date : 2006-12-01 DOI:10.1109/APMC.2006.4429660

C. Bordas, K. Grenier, D. Dubuc, M. Paillard, J. Cazaux, R. Plana

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引用次数: 6

摘要

本文介绍了适用于低功率和高功率应用的电容式MEM开关的优化制造方法。为了获得良好的电容比，对MEM开关的接触质量进行了优化。研究了金属线粗糙度和膜平整度。因此，插入损耗为0.13 dB，在20 GHz时隔离度为40 dB。它对应于47%的接触质量，这相当于在目前的低功率水平技术中获得的质量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Performances optimization of capacitive parallel MEMS switches

This paper describes the optimized fabrication of capacitive MEM switch dedicated to both low and high power applications. In order to get a good capacitor ratio, the contact quality of the MEM switch has been optimized. Both metal line roughness and membrane flatness have been investigated. Consequently, insertion losses of 0.13 dB as well as an isolation of 40 dB at 20 GHz have been measured. It corresponds to a 47% contact quality, which is equivalent to those obtained in the state of the art with low power level technologies.

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2006 Asia-Pacific Microwave Conference

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