基于0.18 μm CMOS工艺的6位2-GS/s闪存模数转换器

Ying-Zu Lin, Yen-Ting Liu, Soon-Jyh Chang
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引用次数: 5

摘要

6位闪存ADC采用台积电CMOS 0.18 μm 1P6M工艺制作,支持高达2gs /s的采样率。所提出的ADC包括一个跟踪保持放大器、一个比较器阵列、一个基于rom的四通道64到6编码器、一个多路复用器和一个时钟生成和分配系统。在高速adc中使用的传统的基于锁存器的比较器,采用连续时间比较器来最小化回踢噪声和偏移。当采样频率为2ghz时,在200 MHz左右的输入频率下,测量到的SNDR为30.01 dB。ADC的1.8 v电源功耗为255mw,芯片面积为1.88 x 1.92 mm2。在芯片实现的基础上,对电阻平均网络进行了频域分析。揭示了与输入频率相关的平均差分对的特性。
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A 6-Bit 2-GS/s Flash Aanlog-to-Digital Converter in 0.18-μm CMOS Process
A 6-bit flash ADC is fabricated in TSMC CMOS 0.18-μm 1P6M process and supports a sampling rate up to 2 GS/s. The proposed ADC consists of a track-and-hold amplifier, a comparator array, a four-channel ROM-based 64-to-6 encoder, a multiplexer, and a clock generation and distribution system. Instead of traditional latch-based comparators used in high-speed ADCs, continuous-time comparators are employed to minimize kick-back noises and offsets. When the sampling frequency is 2 GHz, the measured SNDR is 30.01 dB at input frequency around 200 MHz. The ADC consumes 255 mW from a 1.8-V supply and occupies 1.88 x 1.92 mm2 of die area. In addition to chip implementation, an analysis on resistive averaging network in frequency domain is presented. Characteristics of averaged differential pairs related to input frequency are revealed.
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