无结纳米线晶体管跨电容的解析紧凑模型

2021 IEEE Latin America Electron Devices Conference (LAEDC) Pub Date : 2021-04-19 DOI:10.1109/LAEDC51812.2021.9437910

M. Pavanello, T. A. Ribeiro, A. Cerdeira, F. Avila-Herrera

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摘要

本文提出了长沟道三栅无结纳米线晶体管跨电容的紧凑解析模型。通过与3D TCAD模拟的比较，验证了该模型的有效性，结果显示出非常好的一致性，所有操作区域之间都有连续的转换。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analytical Compact Model for Transcapacitances of Junctionless Nanowire Transistors

This paper presents the proposal of a compact analytical model for the transcapacitances of long-channel triple gate junctionless nanowire transistors. The model is validated using comparisons against 3D TCAD simulations showing very good agreement, with continuous transitions between all regions of operation.

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2021 IEEE Latin America Electron Devices Conference (LAEDC)

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