使用精确的MOS模型优化谐振变换器设计

Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting Pub Date : 1990-10-07 DOI:10.1109/IAS.1990.152394

G. A. Franz, J. Walden, R. S. Scott, W. Bicknell, R. Steigerwald

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引用次数: 3

摘要

介绍了用于谐振功率变换器设计的交流和直流功率MOSFET模型。详细研究了器件参数对电路性能的影响。对1 MHz谐振变换器电路进行了仿真，结果表明电路波形与面包板测量结果一致，具有较高的精度。因此，设计优化可以通过模拟来执行，而不需要面包板迭代

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Use of accurate MOS models for optimizing resonant converter designs

AC and DC power MOSFET models for the design of resonant power converters are described. The influence of device parameters on the circuit performance is investigated in detail. A 1 MHz resonant converter circuit is simulated, and circuit waveforms are shown to agree with breadboard measurements with a high level of accuracy. Thus, design optimization can be performed through simulations without the need of breadboard iterations.<>

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Conference Record of the 1990 IEEE Industry Applications Society Annual Meeting

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