用低压OMCVD法在富硒条件下生长氮掺杂ZnSe的ZnSe蓝色LED

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496339

M. Yeh, Ming-kwei Lee

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摘要

在300 K时观察到生长的ZnSe二极管的纯蓝色发射。EL光谱以2.68 eV的半宽52 meV的带间发射峰为主。结果与光致发光光谱结果一致。这表明在良好的生长条件下，获得了高质量的ZnSe蓝色led。

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ZnSe blue LED with nitrogen-doped ZnSe grown in a Se-rich condition by low-pressure OMCVD

Pure-blue emission of the as-grown ZnSe diode at 300 K was observed. The EL spectrum was dominated by a band-to-band emission peak at 2.68 eV with a half-width 52 meV. The results were consistent with that of the photoluminescence spectrum. These indicated that high-quality ZnSe blue LEDs were obtained under the developed growth condition.

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1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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