{"title":"考虑电离辐射效应的SPICE模型参数提取","authors":"K. Petrosyants, M. Kozhukhov","doi":"10.1109/EWDTS.2014.7027055","DOIUrl":null,"url":null,"abstract":"Universal SPICE macro-model of Si bipolar junction transistor (BJT) and SiGe heterojunction bipolar transistor (HBT) taking into account total irradiation dose effects is presented. A method of macro-model radiation-dependent parameters extraction from the measured data is described. The advantage of the proposed method is simplicity of parameter definition. Simulated and measured transistor characteristics are in a good agreement.","PeriodicalId":272780,"journal":{"name":"Proceedings of IEEE East-West Design & Test Symposium (EWDTS 2014)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"SPICE model parameters extraction taking into account the ionizing radiation effects\",\"authors\":\"K. Petrosyants, M. Kozhukhov\",\"doi\":\"10.1109/EWDTS.2014.7027055\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Universal SPICE macro-model of Si bipolar junction transistor (BJT) and SiGe heterojunction bipolar transistor (HBT) taking into account total irradiation dose effects is presented. A method of macro-model radiation-dependent parameters extraction from the measured data is described. The advantage of the proposed method is simplicity of parameter definition. Simulated and measured transistor characteristics are in a good agreement.\",\"PeriodicalId\":272780,\"journal\":{\"name\":\"Proceedings of IEEE East-West Design & Test Symposium (EWDTS 2014)\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE East-West Design & Test Symposium (EWDTS 2014)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EWDTS.2014.7027055\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE East-West Design & Test Symposium (EWDTS 2014)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EWDTS.2014.7027055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SPICE model parameters extraction taking into account the ionizing radiation effects
Universal SPICE macro-model of Si bipolar junction transistor (BJT) and SiGe heterojunction bipolar transistor (HBT) taking into account total irradiation dose effects is presented. A method of macro-model radiation-dependent parameters extraction from the measured data is described. The advantage of the proposed method is simplicity of parameter definition. Simulated and measured transistor characteristics are in a good agreement.
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