Tan-Yi Li, Wenchao Chen, Dawei Wang, Q. Zhan, Guangrong Li, Kai Kang, W. Yin
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Parallel Simulation of Resistive Random Access Memory with Hexahedral Elements
In this work, an in-house developed parallel-computation simulator is employed to study the electrothermal performance of resistive random access memory (RRAM). To save computing storage, the 3D hexahedral elements are used to discretize the structures. The validity of the in-house simulator is investigated first, and then the thermal crosstalk effect of RRAM array is studied base on simulation results.
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