{"title":"无绝缘子装置的动态和噪声性能","authors":"C. Ravariu, Avireni Srinivasulu, D. Mihaiescu","doi":"10.1109/ICONC345789.2020.9117531","DOIUrl":null,"url":null,"abstract":"This paper studies dynamic and noise simulations of an alternative tunnel transistor that is composed of the semiconductor/vacuum/ semiconductor succession on insulator. The body of the device is the vacuum zone that is equivalent to Nothing On Insulator (NOI). The conduction mechanisms were approbated to be the Fowler-Nordheim tunneling as reported in previous papers. Dynamic and noise regimes rather suggest the NOI applications at high frequencies: capacitances of 3÷7×10−17F/µm and reduced noise.","PeriodicalId":155813,"journal":{"name":"2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Dynamic and Noise Performances of the Nothing On Insulator Device\",\"authors\":\"C. Ravariu, Avireni Srinivasulu, D. Mihaiescu\",\"doi\":\"10.1109/ICONC345789.2020.9117531\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper studies dynamic and noise simulations of an alternative tunnel transistor that is composed of the semiconductor/vacuum/ semiconductor succession on insulator. The body of the device is the vacuum zone that is equivalent to Nothing On Insulator (NOI). The conduction mechanisms were approbated to be the Fowler-Nordheim tunneling as reported in previous papers. Dynamic and noise regimes rather suggest the NOI applications at high frequencies: capacitances of 3÷7×10−17F/µm and reduced noise.\",\"PeriodicalId\":155813,\"journal\":{\"name\":\"2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICONC345789.2020.9117531\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICONC345789.2020.9117531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dynamic and Noise Performances of the Nothing On Insulator Device
This paper studies dynamic and noise simulations of an alternative tunnel transistor that is composed of the semiconductor/vacuum/ semiconductor succession on insulator. The body of the device is the vacuum zone that is equivalent to Nothing On Insulator (NOI). The conduction mechanisms were approbated to be the Fowler-Nordheim tunneling as reported in previous papers. Dynamic and noise regimes rather suggest the NOI applications at high frequencies: capacitances of 3÷7×10−17F/µm and reduced noise.
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