{"title":"单片集成Si-GaN级联编码整流器的开关特性","authors":"Jie Ren, Chao Liu, C. Tang, K. Lau, J. Sin","doi":"10.23919/ISPSD.2017.7988928","DOIUrl":null,"url":null,"abstract":"In this paper, the switching performance of monolithically integrated Si-GaN cascoded rectifiers is presented. The reverse recovery charge of the cascoded rectifier is 86.2% less than that of a Si fast recovery diode (FRD), which reveals great potential of cascoded rectifiers for high-speed power switching applications. Moreover, the double pulse tests are carried out for the cascoded rectifiers formed by monolithic integration and wire-bonding. The resulting power spectral densities show that the monolithically integrated one does not have current oscillation compared to that of the wire-bonded one.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Switching characteristics of monolithically integrated Si-GaN cascoded rectifiers\",\"authors\":\"Jie Ren, Chao Liu, C. Tang, K. Lau, J. Sin\",\"doi\":\"10.23919/ISPSD.2017.7988928\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the switching performance of monolithically integrated Si-GaN cascoded rectifiers is presented. The reverse recovery charge of the cascoded rectifier is 86.2% less than that of a Si fast recovery diode (FRD), which reveals great potential of cascoded rectifiers for high-speed power switching applications. Moreover, the double pulse tests are carried out for the cascoded rectifiers formed by monolithic integration and wire-bonding. The resulting power spectral densities show that the monolithically integrated one does not have current oscillation compared to that of the wire-bonded one.\",\"PeriodicalId\":202561,\"journal\":{\"name\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISPSD.2017.7988928\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988928","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Switching characteristics of monolithically integrated Si-GaN cascoded rectifiers
In this paper, the switching performance of monolithically integrated Si-GaN cascoded rectifiers is presented. The reverse recovery charge of the cascoded rectifier is 86.2% less than that of a Si fast recovery diode (FRD), which reveals great potential of cascoded rectifiers for high-speed power switching applications. Moreover, the double pulse tests are carried out for the cascoded rectifiers formed by monolithic integration and wire-bonding. The resulting power spectral densities show that the monolithically integrated one does not have current oscillation compared to that of the wire-bonded one.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
