一种1GBit/s光/电输入单片砷化镓发射机。

1986 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1986-06-02 DOI:10.1109/MWSYM.1986.1132289

M. Walton, P. Haugen, S. Palmquist

{"title":"一种1GBit/s光/电输入单片砷化镓发射机。","authors":"M. Walton, P. Haugen, S. Palmquist","doi":"10.1109/MWSYM.1986.1132289","DOIUrl":null,"url":null,"abstract":"A 1GBit/s optical input transmitter chip has been developed to evaluate the performance of optical fibers as a communication media in high speed electronics. The transmitter chip has been fabricated in depletion mode GaAs with a one micron gate length. Optical/electrical functionality has been demonstrated at the wafer level.","PeriodicalId":109161,"journal":{"name":"1986 IEEE MTT-S International Microwave Symposium Digest","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 1GBit/s Optical/Electrical Input Monolithic GaAs Transmitter I. C .\",\"authors\":\"M. Walton, P. Haugen, S. Palmquist\",\"doi\":\"10.1109/MWSYM.1986.1132289\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1GBit/s optical input transmitter chip has been developed to evaluate the performance of optical fibers as a communication media in high speed electronics. The transmitter chip has been fabricated in depletion mode GaAs with a one micron gate length. Optical/electrical functionality has been demonstrated at the wafer level.\",\"PeriodicalId\":109161,\"journal\":{\"name\":\"1986 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1986.1132289\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1986.1132289","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

为了评价光纤作为高速电子通信介质的性能，研制了一种1GBit/s光输入传输芯片。该发射机芯片采用耗尽模式GaAs制成，栅极长度为1微米。光学/电气功能已在晶圆级得到验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

A 1GBit/s Optical/Electrical Input Monolithic GaAs Transmitter I. C .

A 1GBit/s optical input transmitter chip has been developed to evaluate the performance of optical fibers as a communication media in high speed electronics. The transmitter chip has been fabricated in depletion mode GaAs with a one micron gate length. Optical/electrical functionality has been demonstrated at the wafer level.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1986 IEEE MTT-S International Microwave Symposium Digest

自引率

0.00%

发文量