{"title":"高密度，小于10 m欧姆R/sub dson/ 100伏n沟道场效应管，用于汽车应用","authors":"S. Sobhani, D. Kinzer, L. Ma, D. Asselanis","doi":"10.1109/ISPSD.2000.856846","DOIUrl":null,"url":null,"abstract":"Presented in this paper are the results of high-density trench designs in producing extremely low R/sub dson/ MOSFETs in the 100 VN voltage class. R.A. products of 110 m/spl Omega/.mm/sup 2/ and 125 m/spl Omega/.mm/sup 2/ (depending on design) at 10 V gate are the lowest reported in the industry. The incentive behind this work is to address the rising need of this class of MOSFETs in Automotive applications.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"High density, sub 10 m Ohm R/sub dson/ 100 volt N-channel FETs for automotive applications\",\"authors\":\"S. Sobhani, D. Kinzer, L. Ma, D. Asselanis\",\"doi\":\"10.1109/ISPSD.2000.856846\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Presented in this paper are the results of high-density trench designs in producing extremely low R/sub dson/ MOSFETs in the 100 VN voltage class. R.A. products of 110 m/spl Omega/.mm/sup 2/ and 125 m/spl Omega/.mm/sup 2/ (depending on design) at 10 V gate are the lowest reported in the industry. The incentive behind this work is to address the rising need of this class of MOSFETs in Automotive applications.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856846\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856846","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High density, sub 10 m Ohm R/sub dson/ 100 volt N-channel FETs for automotive applications
Presented in this paper are the results of high-density trench designs in producing extremely low R/sub dson/ MOSFETs in the 100 VN voltage class. R.A. products of 110 m/spl Omega/.mm/sup 2/ and 125 m/spl Omega/.mm/sup 2/ (depending on design) at 10 V gate are the lowest reported in the industry. The incentive behind this work is to address the rising need of this class of MOSFETs in Automotive applications.
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