具有改进的共模反馈稳定性的低功率高带宽前置放大器

S. Varma, B. Bhuvan
{"title":"具有改进的共模反馈稳定性的低功率高带宽前置放大器","authors":"S. Varma, B. Bhuvan","doi":"10.1109/EDSSC.2017.8126449","DOIUrl":null,"url":null,"abstract":"A low-power high feedback factor common mode feedback technique using subthreshold MOSFETs is presented in this paper. The proposed approach is an improved version of the conventional resistive degeneration of current mirrors. The proposed technique is implemented in preamplifier which is designed in UMC 180 nm technology with 1.8V power supply and 225nA bias current. The SPICE simulations show that the proposed method achieves 1.9 times increase in the differential mode bandwidth besides 2.5 times increase in the common mode feedback factor compared to the conventional approach for the same power consumption.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low-power high-bandwidth preamplifier with improved common mode feedback stability\",\"authors\":\"S. Varma, B. Bhuvan\",\"doi\":\"10.1109/EDSSC.2017.8126449\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low-power high feedback factor common mode feedback technique using subthreshold MOSFETs is presented in this paper. The proposed approach is an improved version of the conventional resistive degeneration of current mirrors. The proposed technique is implemented in preamplifier which is designed in UMC 180 nm technology with 1.8V power supply and 225nA bias current. The SPICE simulations show that the proposed method achieves 1.9 times increase in the differential mode bandwidth besides 2.5 times increase in the common mode feedback factor compared to the conventional approach for the same power consumption.\",\"PeriodicalId\":163598,\"journal\":{\"name\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2017.8126449\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8126449","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文提出了一种基于亚阈值mosfet的低功率高反馈因子共模反馈技术。提出的方法是一种改进版本的传统电阻退化电流镜。采用UMC 180nm工艺设计的前置放大器,采用1.8V电源和225nA偏置电流。SPICE仿真结果表明,在相同功耗下,该方法的差模带宽比传统方法提高1.9倍,共模反馈因子提高2.5倍。
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Low-power high-bandwidth preamplifier with improved common mode feedback stability
A low-power high feedback factor common mode feedback technique using subthreshold MOSFETs is presented in this paper. The proposed approach is an improved version of the conventional resistive degeneration of current mirrors. The proposed technique is implemented in preamplifier which is designed in UMC 180 nm technology with 1.8V power supply and 225nA bias current. The SPICE simulations show that the proposed method achieves 1.9 times increase in the differential mode bandwidth besides 2.5 times increase in the common mode feedback factor compared to the conventional approach for the same power consumption.
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