{"title":"利用基于电流的MOSFET模型设计射频CMOS低噪声放大器","authors":"V. Baroncini, O. C. Gouveia-Filho","doi":"10.1145/1016568.1016596","DOIUrl":null,"url":null,"abstract":"This paper presents a design methodology for RF CMOS low noise amplifiers (LNA). This methodology uses a current-based MOSFET model, which allows a detailed analysis of an LNA for all MOSFET's inversion regions. Design equations, including the induced gate noise in MOS devices are also presented and a design example with simulation results is shown.","PeriodicalId":275811,"journal":{"name":"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Design of RF CMOS low noise amplifiers using a current based MOSFET model\",\"authors\":\"V. Baroncini, O. C. Gouveia-Filho\",\"doi\":\"10.1145/1016568.1016596\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a design methodology for RF CMOS low noise amplifiers (LNA). This methodology uses a current-based MOSFET model, which allows a detailed analysis of an LNA for all MOSFET's inversion regions. Design equations, including the induced gate noise in MOS devices are also presented and a design example with simulation results is shown.\",\"PeriodicalId\":275811,\"journal\":{\"name\":\"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/1016568.1016596\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. SBCCI 2004. 17th Symposium on Integrated Circuits and Systems Design (IEEE Cat. No.04TH8784)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1016568.1016596","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of RF CMOS low noise amplifiers using a current based MOSFET model
This paper presents a design methodology for RF CMOS low noise amplifiers (LNA). This methodology uses a current-based MOSFET model, which allows a detailed analysis of an LNA for all MOSFET's inversion regions. Design equations, including the induced gate noise in MOS devices are also presented and a design example with simulation results is shown.
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