VT + 2Vds及以下的模拟电路设计

K. Layton, D. Comer, D. Comer
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引用次数: 4

摘要

设计方法和架构的高性能模拟电路工作在电源电压在VT + 2 Vds,sat。利用这些方法设计了一个低压放大器。该放大器采用AMIS 0.5 μ m CMOS工艺制造,p通道阈值电压为0.8 V,可以在低至0.75 V的电源电压下工作,并具有完整的轨对轨输入和输出操作。该放大器的开环增益为105 dB, GBW为0.31 MHz,而0.8 V电源的功耗为11.5 muW。该设计方法可与先进的CMOS工艺一起使用,以进一步降低所需的模拟电源电压。
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Analog circuit design at and below VT + 2Vds,sat
Design methods and architectures for high-performance analog circuitry which operates at supply voltages at and below VT + 2 Vds,sat are developed. A low voltage amplifier is designed using these methods. The amplifier, fabricated in an AMIS 0.5 mum CMOS process with 0.8 V p-channel threshold voltages, is shown to operate at supply voltages as low as 0.75 V with full rail-to-rail input and output operation. The amplifier shows 105 dB of open loop gain and GBW of 0.31 MHz while dissipating 11.5 muW from a 0.8 V supply. The design methods may be used with advanced CMOS processes to further reduce the required analog supply voltage.
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