CMOS线性模拟设计的缩放指南

T. Levi, N. Lewis, J. Tomas, P. Fouillat
{"title":"CMOS线性模拟设计的缩放指南","authors":"T. Levi, N. Lewis, J. Tomas, P. Fouillat","doi":"10.1109/RME.2007.4401849","DOIUrl":null,"url":null,"abstract":"This paper proposes scaling guidelines for CMOS analog design during a technology migration. The scaling rules aim to be easy to apply and are based on the simplest MOS transistor model. The principle is to transpose one circuit topology from one technology to another, while keeping the main figures of merit, and the issue is to quickly calculate the new transistor dimensions. Furthermore, when the target technology has smaller minimum length, we expect to obtain a decrease of area. The proposed guidelines are applied to linear examples: OTAs. The results are compared on four CMOS processes whose minimum length are 0.8 mum, 0.35 mum, 0.25 mum and 0.12 mum.","PeriodicalId":118230,"journal":{"name":"2007 Ph.D Research in Microelectronics and Electronics Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Scaling guidelines for CMOS linear analog design\",\"authors\":\"T. Levi, N. Lewis, J. Tomas, P. Fouillat\",\"doi\":\"10.1109/RME.2007.4401849\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes scaling guidelines for CMOS analog design during a technology migration. The scaling rules aim to be easy to apply and are based on the simplest MOS transistor model. The principle is to transpose one circuit topology from one technology to another, while keeping the main figures of merit, and the issue is to quickly calculate the new transistor dimensions. Furthermore, when the target technology has smaller minimum length, we expect to obtain a decrease of area. The proposed guidelines are applied to linear examples: OTAs. The results are compared on four CMOS processes whose minimum length are 0.8 mum, 0.35 mum, 0.25 mum and 0.12 mum.\",\"PeriodicalId\":118230,\"journal\":{\"name\":\"2007 Ph.D Research in Microelectronics and Electronics Conference\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-07-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Ph.D Research in Microelectronics and Electronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RME.2007.4401849\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Ph.D Research in Microelectronics and Electronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RME.2007.4401849","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文提出了CMOS模拟设计在技术迁移过程中的缩放准则。缩放规则的目标是易于应用,并基于最简单的MOS晶体管模型。原理是将一种电路拓扑从一种技术转换到另一种技术,同时保持主要的优点,问题是快速计算新的晶体管尺寸。此外,当目标技术具有较小的最小长度时,我们期望获得面积的减少。建议的准则适用于线性示例:ota。对最小长度为0.8、0.35、0.25和0.12的4种CMOS工艺进行了比较。
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Scaling guidelines for CMOS linear analog design
This paper proposes scaling guidelines for CMOS analog design during a technology migration. The scaling rules aim to be easy to apply and are based on the simplest MOS transistor model. The principle is to transpose one circuit topology from one technology to another, while keeping the main figures of merit, and the issue is to quickly calculate the new transistor dimensions. Furthermore, when the target technology has smaller minimum length, we expect to obtain a decrease of area. The proposed guidelines are applied to linear examples: OTAs. The results are compared on four CMOS processes whose minimum length are 0.8 mum, 0.35 mum, 0.25 mum and 0.12 mum.
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