{"title":"锗和石墨烯填充硅微孔阵列1550 nm红外光子吸收的物理模拟","authors":"Ching-Yu Hsu, Z. Pei","doi":"10.1109/OECC48412.2020.9273652","DOIUrl":null,"url":null,"abstract":"The 1550 nm photon absorption of Germanium and Graphene filled Silicon micro-holes array is studied in this work. They demonstrated excellent infrared photon absorption ability, which is very suitable for Si integrated photonic circuit.","PeriodicalId":433309,"journal":{"name":"2020 Opto-Electronics and Communications Conference (OECC)","volume":"1932 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Physical simulation on the 1550 nm Infrared Photon Absortion in Ge and Graphene filled Silicon Micro-hole Array\",\"authors\":\"Ching-Yu Hsu, Z. Pei\",\"doi\":\"10.1109/OECC48412.2020.9273652\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The 1550 nm photon absorption of Germanium and Graphene filled Silicon micro-holes array is studied in this work. They demonstrated excellent infrared photon absorption ability, which is very suitable for Si integrated photonic circuit.\",\"PeriodicalId\":433309,\"journal\":{\"name\":\"2020 Opto-Electronics and Communications Conference (OECC)\",\"volume\":\"1932 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 Opto-Electronics and Communications Conference (OECC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OECC48412.2020.9273652\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 Opto-Electronics and Communications Conference (OECC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OECC48412.2020.9273652","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Physical simulation on the 1550 nm Infrared Photon Absortion in Ge and Graphene filled Silicon Micro-hole Array
The 1550 nm photon absorption of Germanium and Graphene filled Silicon micro-holes array is studied in this work. They demonstrated excellent infrared photon absorption ability, which is very suitable for Si integrated photonic circuit.
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