J. Ayubi-Moak, R. Akis, M. Saraniti, D. Ferry, S. Goodnick
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Physical Modeling of Microwave Transistors Using a Full-Band/Full-Wave Simulation Approach
In this work, a full-band Cellular Monte Carlo (CMC) device simulator is self-consistently coupled to an alternate-direction implicit (ADI) finite-difference time-domain (FDTD) full-wave solver. This simulation tool is then used to study the high-frequency response of a dual-finger gate GaAs MESFET via direct S-parameter extraction from time-domain simulation results.
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