有界半导体的热电性能图

G. Logvinov, V. Zakordonets
{"title":"有界半导体的热电性能图","authors":"G. Logvinov, V. Zakordonets","doi":"10.1109/ICT.1996.553295","DOIUrl":null,"url":null,"abstract":"The thermoelectric figure of merit is investigated, taking bulk and surface parameters into account. The electron and phonon temperatures are supposed to be different. It is shown that the thermoelectric figure of merit increases as sample dimensions decrease when the electron subsystem has an isotropic heat contact with the thermostat and the phonon subsystem has an adiabatical one.","PeriodicalId":447328,"journal":{"name":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Thermoelectric figure of merit of bounded semiconductors\",\"authors\":\"G. Logvinov, V. Zakordonets\",\"doi\":\"10.1109/ICT.1996.553295\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The thermoelectric figure of merit is investigated, taking bulk and surface parameters into account. The electron and phonon temperatures are supposed to be different. It is shown that the thermoelectric figure of merit increases as sample dimensions decrease when the electron subsystem has an isotropic heat contact with the thermostat and the phonon subsystem has an adiabatical one.\",\"PeriodicalId\":447328,\"journal\":{\"name\":\"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICT.1996.553295\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fifteenth International Conference on Thermoelectrics. Proceedings ICT '96","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.1996.553295","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

在考虑体积和表面参数的情况下,研究了热电优值。电子和声子的温度应该是不同的。结果表明,当电子子系统与恒温器各向同性热接触,声子子系统与恒温器绝热接触时,热电优值随样品尺寸的减小而增大。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Thermoelectric figure of merit of bounded semiconductors
The thermoelectric figure of merit is investigated, taking bulk and surface parameters into account. The electron and phonon temperatures are supposed to be different. It is shown that the thermoelectric figure of merit increases as sample dimensions decrease when the electron subsystem has an isotropic heat contact with the thermostat and the phonon subsystem has an adiabatical one.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Thermoelectric generation and related properties of conventional type module based on Si-Ge alloy Doping with organic halogen-containing compounds the Bi2(Te,Se)3 solid solutions The theoretical analysis of the thermoelectric semiconducting crystalline materials figure of merit Thermoelectric coolers with small response time Effective figure of merit increase at the large temperature drops
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1