高k/金属栅极堆叠中TDDB频率依赖性的新认识

2013 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2013-10-01 DOI:10.1109/IIRW.2013.6804142

A. Bezza, M. Rafik, D. Roy, X. Federspiel, P. Mora, G. Ghibaudo

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引用次数: 7

摘要

本文研究了nMOS器件在正栅电压下的氧化物击穿问题。首先，对于击穿事件检测，体电流比栅极电流更敏感。然后，由于测试中断被证明会在TBD评估中引起可能的误差，因此提出了一种针对直流和交流应力的动态击穿检测方法。最后，讨论了电荷捕获/去捕获的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New insight on the frequency dependence of TDDB in high-k/metal gate stacks

This paper deals with the oxide breakdown (BD) under positive gate voltage in nMOS Devices. First, bulk current is shown to be more sensitive than gate current for breakdown event detection. Then, since test interruption is shown to induce possible error in TBD evaluation, a methodology with an on the fly detection of breakdown is proposed for both DC and AC stresses. Finally, a discussion on the impact of charge trapping/detrapping is opened.

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2013 IEEE International Integrated Reliability Workshop Final Report

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