{"title":"GaAs半绝缘栅场效应管(sigfet)作为大功率MMIC控制器件","authors":"Y. Yun, R. Gutmann","doi":"10.1109/MWSYM.1988.22199","DOIUrl":null,"url":null,"abstract":"The GaAs SIGFETs device structure, fabrication, initial experimental performance and advantages compared to conventional recessed-gate GaAs MESFET devices are described. GaAs planar SIGFETs have been fabricated with higher continuous-wave power handling capability than and similar switching frequency figure-of-merit to those of comparable GaAs recessed-gate MESFETs. Initial SIGFET devices demonstrated 3 dB to 5 dB increase in power-handling capability with a switching frequency figure-of-merit of 362 GHz. This improved power performance is due chiefly to the semi-insulated layer under the gate metal, which allows higher gate-breakdown voltage as well as higher drain saturation current.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"GaAs semi-insulated-gate FETs (SIGFETs) as high power MMIC control devices\",\"authors\":\"Y. Yun, R. Gutmann\",\"doi\":\"10.1109/MWSYM.1988.22199\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The GaAs SIGFETs device structure, fabrication, initial experimental performance and advantages compared to conventional recessed-gate GaAs MESFET devices are described. GaAs planar SIGFETs have been fabricated with higher continuous-wave power handling capability than and similar switching frequency figure-of-merit to those of comparable GaAs recessed-gate MESFETs. Initial SIGFET devices demonstrated 3 dB to 5 dB increase in power-handling capability with a switching frequency figure-of-merit of 362 GHz. This improved power performance is due chiefly to the semi-insulated layer under the gate metal, which allows higher gate-breakdown voltage as well as higher drain saturation current.<<ETX>>\",\"PeriodicalId\":339513,\"journal\":{\"name\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1988.22199\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22199","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaAs semi-insulated-gate FETs (SIGFETs) as high power MMIC control devices
The GaAs SIGFETs device structure, fabrication, initial experimental performance and advantages compared to conventional recessed-gate GaAs MESFET devices are described. GaAs planar SIGFETs have been fabricated with higher continuous-wave power handling capability than and similar switching frequency figure-of-merit to those of comparable GaAs recessed-gate MESFETs. Initial SIGFET devices demonstrated 3 dB to 5 dB increase in power-handling capability with a switching frequency figure-of-merit of 362 GHz. This improved power performance is due chiefly to the semi-insulated layer under the gate metal, which allows higher gate-breakdown voltage as well as higher drain saturation current.<>
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