低相位噪声，低功耗集成电路vco 5-8 GHz无线应用

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017) Pub Date : 2000-06-11 DOI:10.1109/MWSYM.2000.863284

H. Jacobsson, S. Gevorgian, M. Mokhtari, B. Hansson, C. Hedenas, T. Lewin, W. Rabe, A. Schuppen

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引用次数: 25

摘要

采用Si/SiGe-HBT技术设计和制造了一套5- 8ghz频率范围内的全集成vco。在2 V电源电压和6 mW功耗下，在100 kHz载波外测得最小相位噪声为-100 dBc/Hz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low phase noise, low power IC VCOs for 5-8 GHz wireless applications

A set of fully integrated VCOs in the 5-8 GHz frequency range has been designed and manufactured in Si/SiGe-HBT technology. A minimum phase noise of -100 dBc/Hz at 100 kHz off-carrier was measured for 2 V supply voltage and 6 mW power consumption.

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2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)

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