金刚石动力器件的潜力

S. Yamasaki, T. Makino, D. Takeuchi, M. Ogura, H. Kato, T. Matsumoto, T. Iwasaki, M. Hatano, M. Suzuki, S. Koizumi, H. Ohashi, H. Okushi
{"title":"金刚石动力器件的潜力","authors":"S. Yamasaki, T. Makino, D. Takeuchi, M. Ogura, H. Kato, T. Matsumoto, T. Iwasaki, M. Hatano, M. Suzuki, S. Koizumi, H. Ohashi, H. Okushi","doi":"10.1109/ISPSD.2013.6694410","DOIUrl":null,"url":null,"abstract":"For the next generation power devices, we have developed several types of unique diamond power devices. By these device performances, we conclude that by using the unique properties of diamond in addition to the superior structural FOM (figure of merit) the diamond power devices have high potential for the power devices. We discuss the potential of diamond power devices, specially, for ultra-high voltage application.","PeriodicalId":175520,"journal":{"name":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Potential of diamond power devices\",\"authors\":\"S. Yamasaki, T. Makino, D. Takeuchi, M. Ogura, H. Kato, T. Matsumoto, T. Iwasaki, M. Hatano, M. Suzuki, S. Koizumi, H. Ohashi, H. Okushi\",\"doi\":\"10.1109/ISPSD.2013.6694410\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the next generation power devices, we have developed several types of unique diamond power devices. By these device performances, we conclude that by using the unique properties of diamond in addition to the superior structural FOM (figure of merit) the diamond power devices have high potential for the power devices. We discuss the potential of diamond power devices, specially, for ultra-high voltage application.\",\"PeriodicalId\":175520,\"journal\":{\"name\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"volume\":\"102 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2013.6694410\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2013.6694410","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

针对下一代动力器件,我们开发了几种独特的金刚石动力器件。通过这些器件的性能,我们得出结论,利用金刚石的独特性能以及优越的结构FOM (merit figure),金刚石功率器件在功率器件中具有很高的潜力。我们讨论了金刚石功率器件的潜力,特别是在超高压应用方面。
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Potential of diamond power devices
For the next generation power devices, we have developed several types of unique diamond power devices. By these device performances, we conclude that by using the unique properties of diamond in addition to the superior structural FOM (figure of merit) the diamond power devices have high potential for the power devices. We discuss the potential of diamond power devices, specially, for ultra-high voltage application.
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