{"title":"S-C波段宽带包络探测器设计","authors":"S. Alamri, A. AlAmoudi","doi":"10.1109/SIECPC.2011.5876966","DOIUrl":null,"url":null,"abstract":"This paper proposes the design, fabrication, characterization and measurement of an S-C band broadband detector. A brief theoretical outline of detectors and detector devices is presented. The commercially available GaAs packaged detector diode SOD-323 was adapted to build an unamplified detector. A broadband microchip impedance matching network procedure was developed, characterised and used to provide the broadband design for the detector. The measurements show a close agreement between the simulated and measured results. The bandwidth obtained was better than 5 GHz or 100% for 5 GHz frequency centre from 2 GHz to 8 GHz; minimum voltage sensitivity 200 mV/mW over 2 GHz to 8 GHz was achieved and the peak value was more than 1130 mV/mW at 3 GHz.","PeriodicalId":125634,"journal":{"name":"2011 Saudi International Electronics, Communications and Photonics Conference (SIECPC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"S-C bands broadband envelop detector design\",\"authors\":\"S. Alamri, A. AlAmoudi\",\"doi\":\"10.1109/SIECPC.2011.5876966\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper proposes the design, fabrication, characterization and measurement of an S-C band broadband detector. A brief theoretical outline of detectors and detector devices is presented. The commercially available GaAs packaged detector diode SOD-323 was adapted to build an unamplified detector. A broadband microchip impedance matching network procedure was developed, characterised and used to provide the broadband design for the detector. The measurements show a close agreement between the simulated and measured results. The bandwidth obtained was better than 5 GHz or 100% for 5 GHz frequency centre from 2 GHz to 8 GHz; minimum voltage sensitivity 200 mV/mW over 2 GHz to 8 GHz was achieved and the peak value was more than 1130 mV/mW at 3 GHz.\",\"PeriodicalId\":125634,\"journal\":{\"name\":\"2011 Saudi International Electronics, Communications and Photonics Conference (SIECPC)\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 Saudi International Electronics, Communications and Photonics Conference (SIECPC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIECPC.2011.5876966\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Saudi International Electronics, Communications and Photonics Conference (SIECPC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIECPC.2011.5876966","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper proposes the design, fabrication, characterization and measurement of an S-C band broadband detector. A brief theoretical outline of detectors and detector devices is presented. The commercially available GaAs packaged detector diode SOD-323 was adapted to build an unamplified detector. A broadband microchip impedance matching network procedure was developed, characterised and used to provide the broadband design for the detector. The measurements show a close agreement between the simulated and measured results. The bandwidth obtained was better than 5 GHz or 100% for 5 GHz frequency centre from 2 GHz to 8 GHz; minimum voltage sensitivity 200 mV/mW over 2 GHz to 8 GHz was achieved and the peak value was more than 1130 mV/mW at 3 GHz.