超薄沟道锗绝缘体(GeOI) mosfet的多物理场建模与仿真

2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS) Pub Date : 2017-12-01 DOI:10.1109/EDAPS.2017.8276997

Wenchao Chen, Manxi Wang, W. Yin, Erping Li

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引用次数: 2

摘要

采用有限元算法求解载流子输运方程、泊松方程、电流连续性方程和热传导方程，对4nm沟道厚度、300nm沟道长度的数字集成电路GeOI MOSFET的自热效应进行了多物理研究。通过求解扩散载流子输运方程，得到了模拟的J-V曲线。求解了随时间变化的热传导方程，得到了GeOI MOSFET的瞬态温度响应。由于模拟结构的尺寸较小，根据我们的模拟结果，温度响应在纳秒级。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Multiphysics modeling and simulation of ultra-thin channel Germanium on insulator (GeOI) MOSFETs

Multi-physical study of self-heating effect in GeOI MOSFET with 4nm channel thickness and 300nm channel length for digital integrated circuit is carried out by using finite element algorithm to solve carrier transport equations, Poisson equation, current continuity equations and thermal conduction equation. The simulated J-V curve is obtained by solving diffusive carrier transport equations. The time-dependent thermal conduction equation is solved to get the transient temperature response of the GeOI MOSFET. Due to the small size of the simulated structure, temperature response is in the scale of nanosecond according to our simulation results.

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2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)

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