{"title":"宽sio2绝缘d.h.激光器特性与近场:实验与理论","authors":"J. Buus, K. Stubkjaer","doi":"10.1049/IJ-SSED:19790042","DOIUrl":null,"url":null,"abstract":"A detailed experimental investigation of a SiO2insulated GaAlAs laser is performed. The results are compared with theoretical calculations, including strain from the SiO2layer, and good agreement is found. The theory can account for a kink seen in the light/cunent characteristic.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"161 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Characteristic and near field for a broad SiO2insulated d.h. laser: experiment and theory\",\"authors\":\"J. Buus, K. Stubkjaer\",\"doi\":\"10.1049/IJ-SSED:19790042\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A detailed experimental investigation of a SiO2insulated GaAlAs laser is performed. The results are compared with theoretical calculations, including strain from the SiO2layer, and good agreement is found. The theory can account for a kink seen in the light/cunent characteristic.\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\"161 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED:19790042\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED:19790042","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characteristic and near field for a broad SiO2insulated d.h. laser: experiment and theory
A detailed experimental investigation of a SiO2insulated GaAlAs laser is performed. The results are compared with theoretical calculations, including strain from the SiO2layer, and good agreement is found. The theory can account for a kink seen in the light/cunent characteristic.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
