{"title":"基于1mb rfo2的电阻式随机存取存储器的总电离剂量效应","authors":"J. Bi, Yuan Duan, Feng Zhang, Ming Liu","doi":"10.1109/IPFA.2018.8452173","DOIUrl":null,"url":null,"abstract":"Total ionizing dose (TID) induced upset errors in Hf02-based resistive-random-access-memory (RRAM) with 1T1R storage cell structure are investigated. Radiation-induced leakage current in the access transistors on the same bit-lines causes a read decision failure and bit errors observed during TID irradiation experiments. This is verified by testkeys and HSPICE simulations based on the actual circuit structure of the 1 Mb RRAM.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Total Ionizing Dose Effects of 1 Mb RfO2-based Resistive-Random-Access-Memory\",\"authors\":\"J. Bi, Yuan Duan, Feng Zhang, Ming Liu\",\"doi\":\"10.1109/IPFA.2018.8452173\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Total ionizing dose (TID) induced upset errors in Hf02-based resistive-random-access-memory (RRAM) with 1T1R storage cell structure are investigated. Radiation-induced leakage current in the access transistors on the same bit-lines causes a read decision failure and bit errors observed during TID irradiation experiments. This is verified by testkeys and HSPICE simulations based on the actual circuit structure of the 1 Mb RRAM.\",\"PeriodicalId\":382811,\"journal\":{\"name\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2018.8452173\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452173","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Total Ionizing Dose Effects of 1 Mb RfO2-based Resistive-Random-Access-Memory
Total ionizing dose (TID) induced upset errors in Hf02-based resistive-random-access-memory (RRAM) with 1T1R storage cell structure are investigated. Radiation-induced leakage current in the access transistors on the same bit-lines causes a read decision failure and bit errors observed during TID irradiation experiments. This is verified by testkeys and HSPICE simulations based on the actual circuit structure of the 1 Mb RRAM.
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