Zhao Guo-nian, Xian-yu Hai-qing, Song Jian, Li Xiao-bai, Ren Shang-yuan
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Size and shape dependence of the lowest conduction band states in GaAs quantum dots
Using a recently developed new scheme, we investigated the electronic structure of the lowest conduction band states of cuboid GaAs quantum dots with different shapes and sizes in a wide range from 4 to 120a (a is the lattice constant). The critical edge length of the direct/indirect crossover in GaAs cuboid quantum dots depends on the size and shape of the quantum dots. As a deduction we also discussed the critical size of direct/indirect transition in GaAs quantum wires and thin films.