GaAs量子点最低导带态的尺寸和形状依赖性

Zhao Guo-nian, Xian-yu Hai-qing, Song Jian, Li Xiao-bai, Ren Shang-yuan
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引用次数: 0

摘要

利用最近开发的新方案,我们研究了不同形状和尺寸的长方体GaAs量子点在4 ~ 120a (a为晶格常数)范围内最低导带态的电子结构。GaAs长方体量子点直接/间接交叉的临界边长取决于量子点的大小和形状。作为推论,我们还讨论了砷化镓量子线和薄膜中直接/间接跃迁的临界尺寸。
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Size and shape dependence of the lowest conduction band states in GaAs quantum dots
Using a recently developed new scheme, we investigated the electronic structure of the lowest conduction band states of cuboid GaAs quantum dots with different shapes and sizes in a wide range from 4 to 120a (a is the lattice constant). The critical edge length of the direct/indirect crossover in GaAs cuboid quantum dots depends on the size and shape of the quantum dots. As a deduction we also discussed the critical size of direct/indirect transition in GaAs quantum wires and thin films.
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