反激变换器中整流二极管温度补偿电路的设计

Ling-feng Shi, Y. J. Chang, Hui-sen He, H. Nie, Y. Zhao
{"title":"反激变换器中整流二极管温度补偿电路的设计","authors":"Ling-feng Shi, Y. J. Chang, Hui-sen He, H. Nie, Y. Zhao","doi":"10.1049/iet-cds.2011.0254","DOIUrl":null,"url":null,"abstract":"A rectifier diode temperature compensation circuit is presented for primary-side controlled flyback converter. By compensating the variation of secondary-side rectifier diode forward voltage with temperature, the error rate of output voltage in flyback converter will be effectively improved at high temperature. The design of the circuit is based on the negative temperature characteristics of the base-emitter voltage VBE of bipolar transistors. Besides, the circuit can also provide overtemperature protection. Results of simulation based on 0.5 mm bipolar complementary metal oxide semi-conductor process show that the compensation voltage is 0.1 V at 125°C and 0 V at 25°C. The maximum output voltage error rate of flyback converter with compensation is from 3.8 to 0.6% under the temperature between 25 and 125°C. The thermal shutdown threshold is 140°C, and the over-temperature protection hysteresis threshold is 110°C.","PeriodicalId":120076,"journal":{"name":"IET Circuits Devices Syst.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Design of rectifier diode temperature compensation circuit in flyback converter\",\"authors\":\"Ling-feng Shi, Y. J. Chang, Hui-sen He, H. Nie, Y. Zhao\",\"doi\":\"10.1049/iet-cds.2011.0254\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A rectifier diode temperature compensation circuit is presented for primary-side controlled flyback converter. By compensating the variation of secondary-side rectifier diode forward voltage with temperature, the error rate of output voltage in flyback converter will be effectively improved at high temperature. The design of the circuit is based on the negative temperature characteristics of the base-emitter voltage VBE of bipolar transistors. Besides, the circuit can also provide overtemperature protection. Results of simulation based on 0.5 mm bipolar complementary metal oxide semi-conductor process show that the compensation voltage is 0.1 V at 125°C and 0 V at 25°C. The maximum output voltage error rate of flyback converter with compensation is from 3.8 to 0.6% under the temperature between 25 and 125°C. The thermal shutdown threshold is 140°C, and the over-temperature protection hysteresis threshold is 110°C.\",\"PeriodicalId\":120076,\"journal\":{\"name\":\"IET Circuits Devices Syst.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IET Circuits Devices Syst.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/iet-cds.2011.0254\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IET Circuits Devices Syst.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/iet-cds.2011.0254","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

提出了一种用于一次侧控制反激变换器的整流二极管温度补偿电路。通过补偿二次侧整流二极管正向电压随温度的变化,可以有效地提高高温下反激变换器输出电压的误差率。该电路的设计是基于双极晶体管基极-发射极电压VBE的负温度特性。此外,该电路还可提供过温保护。基于0.5 mm双极互补金属氧化物半导体工艺的仿真结果表明,补偿电压在125°C时为0.1 V,在25°C时为0 V。在温度25 ~ 125℃范围内,带补偿的反激变换器的最大输出电压错误率为3.8 ~ 0.6%。热停机阈值为140℃,过温保护迟滞阈值为110℃。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Design of rectifier diode temperature compensation circuit in flyback converter
A rectifier diode temperature compensation circuit is presented for primary-side controlled flyback converter. By compensating the variation of secondary-side rectifier diode forward voltage with temperature, the error rate of output voltage in flyback converter will be effectively improved at high temperature. The design of the circuit is based on the negative temperature characteristics of the base-emitter voltage VBE of bipolar transistors. Besides, the circuit can also provide overtemperature protection. Results of simulation based on 0.5 mm bipolar complementary metal oxide semi-conductor process show that the compensation voltage is 0.1 V at 125°C and 0 V at 25°C. The maximum output voltage error rate of flyback converter with compensation is from 3.8 to 0.6% under the temperature between 25 and 125°C. The thermal shutdown threshold is 140°C, and the over-temperature protection hysteresis threshold is 110°C.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A low-offset low-power and high-speed dynamic latch comparator with a preamplifier-enhanced stage Embedding delay-based physical unclonable functions in networks-on-chip Design of 10T SRAM cell with improved read performance and expanded write margin On the applicability of two-bit carbon nanotube through-silicon via for power distribution networks in 3-D integrated circuits Analytical model and simulation-based analysis of a work function engineered triple metal tunnel field-effect transistor device showing excellent device performance
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1