用于片上系统应用的1-GSPS CMOS闪存A/D转换器

Jincheol Yoo, Kyusun Choi, A. Tangel
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引用次数: 94

摘要

本文介绍了一种超高速CMOS闪存A/D转换器的设计和性能。虽然特色的A/D转换器是在CMOS中设计的,但其性能与目前可用的GaAs技术兼容。为了在CMOS中实现高速,特色A/D转换器采用阈值逆变量化(TIQ)技术。采用0.25 /spl mu/m标准CMOS技术参数,设计了一种基于TIQ的6位闪存A/D转换器。它的采样率高达1 GSPS,在2.5 V时功耗为66.87 mW,占地0.013 mm/sup /面积。所提出的A/D转换器适用于无线产品和其他超高速应用中的片上系统(SoC)应用。
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A 1-GSPS CMOS flash A/D converter for system-on-chip applications
This paper presents an ultrafast CMOS flash A/D converter design and performance. Although the featured A/D converter is designed in CMOS, the performance is compatible to that of GaAs technology currently available. To achieve high-speed in CMOS, the featured A/D converter utilizes the Threshold Inverter Quantization (TIQ) technique. A 6-bit TIQ based flash A/D converter was designed with the 0.25 /spl mu/m standard CMOS technology parameter. It operates with sampling rates up to 1 GSPS, dissipates 66.87 mW of power at 2.5 V, and occupies 0.013 mm/sup 2/ area. The proposed A/D converter is suitable for System-on-Chip (SoC) applications in wireless products and other ultra high speed applications.
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