{"title":"GaAs和GaN PHEMT线性等效电路和噪声模型的实验恢复","authors":"A. Krutov, A. Rebrov","doi":"10.1109/CRMICO.2010.5632530","DOIUrl":null,"url":null,"abstract":"In the present article an experimental recovery of GaAs and GaN PHEMT linear equivalent circuit and noise model are presented. The linear equivalent circuit and noise mode for two types of PHEMT manufactured by FSUE RPC “Istok” (molecular beam epitaxy structure on GaAs and GaN) are recovered.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An experimental recovery of GaAs and GaN PHEMT linear equivalent circuits and noise models\",\"authors\":\"A. Krutov, A. Rebrov\",\"doi\":\"10.1109/CRMICO.2010.5632530\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the present article an experimental recovery of GaAs and GaN PHEMT linear equivalent circuit and noise model are presented. The linear equivalent circuit and noise mode for two types of PHEMT manufactured by FSUE RPC “Istok” (molecular beam epitaxy structure on GaAs and GaN) are recovered.\",\"PeriodicalId\":237662,\"journal\":{\"name\":\"2010 20th International Crimean Conference \\\"Microwave & Telecommunication Technology\\\"\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 20th International Crimean Conference \\\"Microwave & Telecommunication Technology\\\"\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2010.5632530\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2010.5632530","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An experimental recovery of GaAs and GaN PHEMT linear equivalent circuits and noise models
In the present article an experimental recovery of GaAs and GaN PHEMT linear equivalent circuit and noise model are presented. The linear equivalent circuit and noise mode for two types of PHEMT manufactured by FSUE RPC “Istok” (molecular beam epitaxy structure on GaAs and GaN) are recovered.
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