高密度、低压力触点的极限

J. Beale, R. Pease
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引用次数: 11

摘要

普通的压力接触不仅在完整的系统中是不可靠的来源,而且在封装前的集成电路测试中更为严重。使用定制的设备,压力接触的特点是施加的力小到几个nN,接触面积小到10/sup -11/ cm/sup 2/。空气中名义上干净的金-金和铱-金触点的电阻率高于基于金的塑性变形的简单模型所预测的电阻率。界面膜似乎是不可靠的来源。空气中金的表面膜似乎在类似程度上破坏了传导。
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Limits of high density, low-force pressure contacts
The prosaic pressure contact is a source of unreliability not only in completed systems but more seriously in testing of ICs prior to packaging. Using a custom-built apparatus, pressure contacts are characterized with applied forces down to a few nN and contact areas down to 10/sup -11/ cm/sup 2/. Nominally clean gold-gold and iridium-gold contacts in air exhibit resistivities higher than that predicted from a simple model based on the plastic deformation of the gold. Interfacial films appear to be a source of unreliability. The surface film on gold in air appears to disrupt conduction to a similar degree.<>
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