Xuelong Xu, Chunyong Han, E. Shao, Xianghong Lu, Wenxiao Fang, Rongquan Chen, Hengzhou Liu, Weiheng Shao, Yun-lei Shi
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Study of the HPM Interference Effect on Integrated Circuit in a TEM Cell
In this paper, HPM is used as the source of interference to affect the working state of an integrated circuit. The effect of the injected power and the orientation of the studied integrated circuit (FPGA) is investigated. In the experiment, it is found that the induced voltage of the I/O pin can reach 70.3 V under the electromagnetic field high to 1257.44 V/m. In spite of this, the working state of the FPGA remained normal.
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