通道热载流子应力对III-V型体平面mosfet的影响

2012 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2012-04-15 DOI:10.1109/IRPS.2012.6241818

N. Wrachien, A. Cester, D. Bari, E. Zanoni, G. Meneghesso, Y. Q. Wu, P. Ye

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引用次数: 5

摘要

我们用Al2O3栅极电介质对增强模式、反转型III-V型mosfet进行了通道热载子应力。应力引起亚阈值摆幅衰减，阈值电压升高，漏极饱和电流降低。然而，至少在105 s的应力时间内，没有观察到明显的跨导退化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effects of channel hot carrier stress on III–V bulk planar MOSFETs

We performed channel hot carrier stress on enhancement-mode, inversion-type III-V MOSFETs with Al2O3 gate dielectric. The stress induces subthreshold swing degradation, increase on the threshold voltage and reduction of drain saturation current. Nonetheless, no appreciable transconductance degradation can be observed at least with a stress time as long as 105 s.

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2012 IEEE International Reliability Physics Symposium (IRPS)

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