锗finfet密度梯度TCAD模型的校正

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics Pub Date : 2013-09-01 DOI:10.1109/RSM.2013.6706493

Hardik N Mehta, S. Lodha, U. Ganguly, S. Ganguly

{"title":"锗finfet密度梯度TCAD模型的校正","authors":"Hardik N Mehta, S. Lodha, U. Ganguly, S. Ganguly","doi":"10.1109/RSM.2013.6706493","DOIUrl":null,"url":null,"abstract":"We demonstrate that the density-gradient TCAD model can reproduce the results of multi-band Schrodinger-Poisson simulations for quantum confinement in scaled germanium FinFETs with a single fitting parameter that varies by surface orientation, but is independent of doping level and fin thickness.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Calibration of the density-gradient TCAD model for germanium FinFETs\",\"authors\":\"Hardik N Mehta, S. Lodha, U. Ganguly, S. Ganguly\",\"doi\":\"10.1109/RSM.2013.6706493\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate that the density-gradient TCAD model can reproduce the results of multi-band Schrodinger-Poisson simulations for quantum confinement in scaled germanium FinFETs with a single fitting parameter that varies by surface orientation, but is independent of doping level and fin thickness.\",\"PeriodicalId\":346255,\"journal\":{\"name\":\"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RSM.2013.6706493\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2013.6706493","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

我们证明了密度梯度TCAD模型可以用单个拟合参数重现多波段薛定谔-泊松模拟结果，该参数随表面取向而变化，但与掺杂水平和翅片厚度无关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Calibration of the density-gradient TCAD model for germanium FinFETs

We demonstrate that the density-gradient TCAD model can reproduce the results of multi-band Schrodinger-Poisson simulations for quantum confinement in scaled germanium FinFETs with a single fitting parameter that varies by surface orientation, but is independent of doping level and fin thickness.

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RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics

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